Dr. John O’Connell publishes Topical Review on Monolayer Doping in IOP Nanotechnology

Well done to John on publishing an invited Topical Review in IOP Nanotechnology. The article reviewed recent advances in the use of monolayer doping to dope silicon, germanium and indium-gallium-arsenide surfaces to achieve shallow and high dopant concentrations.

Article entitled “Chemical Approaches for Doping Nanodevice Architectures” is available at http://iopscience.iop.org/article/10.1088/0957-4484/27/34/342002/meta

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