Well done to John on publishing an invited Topical Review in IOP Nanotechnology. The article reviewed recent advances in the use of monolayer doping to dope silicon, germanium and indium-gallium-arsenide surfaces to achieve shallow and high dopant concentrations. Article entitled “Chemical Approaches for Doping Nanodevice Architectures” is available at http://iopscience.iop.org/article/10.1088/0957-4484/27/34/342002/meta