Congratulations to MCAG group members Dr. Subhajit Biswas and Jessica Doherty on their recent publication in Nature Communications! Their work involves the bottom up-growth of GeSn nanowires. Sn-based group IV alloys are predicted to to be tunable direct band-gap semiconductor materials in addition to exhibiting high electron and hole mobilities. This makes such materials ideal platforms for co-integration of optoelectronic and high-speed electronic devices.
Paper available at http://www.nature.com/ncomms/2016/160420/ncomms11405/full/ncomms11405.html