Dr Subhajit Biswas’ recent work on GeSn nanowires published in Nature Communications

Congratulations to MCAG group members Dr. Subhajit Biswas and Jessica Doherty on their recent publication in Nature Communications!  Their work involves the bottom up-growth of GeSn nanowires. Sn-based group IV alloys are predicted to to be tunable direct band-gap semiconductor materials in addition to exhibiting high electron and hole mobilities.  This makes such materials ideal platforms for co-integration of optoelectronic and high-speed electronic devices.

Paper available at http://www.nature.com/ncomms/2016/160420/ncomms11405/full/ncomms11405.html