Adria graduated in Chemistry from Universitat de Barcelona (University of Barcelona, 2013) and I achieved a master degree in Electrochemistry from Universitat d’Alacant (University of Alicante, 2015). He was awarded with a three month internship in ETHZürich-IRIS (Institut für Robotik und Intelligente Systeme, Prof. Bradley Nelson) and afterwards worked as a PhD assistant researcher for 15 months in UZH (Institut für Chemie, Prof. Greta R. Patzke). These research periods have provided him a platform to combine five years of theoretical knowledge obtained at undergraduate level with real life laboratory experience being part of several research projects in the areas of nanorobotics, material development and electrochemistry.
In his free time, Adria enjoys volunteering to help students both at the college and school level. His other interests include swimming as a competitor in a non-professional league in Barcelona and hiking and cycling with friends on weekends.
The objective of the project is to develop Si-compatible, direct bandgap nanowires from group IV elements as a platform for energy-efficient electronic devices. Direct bandgap nanowires with compositions based on alloys of Si, Ge and Sn are compatible, in epitaxy, purity and fabrication, with existing Si micro(nano)electronic platforms and are core to achieving future energy efficient on-chip components such as tunnel field effect transistors (TFETs) and optical interconnects.
There are a number of fundamental challenges to overcome to successfully grow GexSn1-x, SixSn1-x and SixGeySn1-x-y nanomaterials. The most serious obstacles are the chemical differences and lattice mismatch between elements. The differences in lattice constants are very large in group IV materials, with the exception of the completely miscible alloy SiGe. Hence these alloy systems are thermodynamically unstable and cannot be produced in bulk form.
In this project, bottom-up nanowire growth techniques, either in eutectic (vapour-liquid-solid (VLS) or sub-eutectic (vapour-solid-solid (VSS)) regimes, will be used to grow Ge, Si and Sn-based alloy nanowires with substantial Sn incorporation. The use of innovative metal catalysts in VLS and VSS growth will permit the incorporation of Sn into the Si or Ge lattice above equilibrium concentrations.